| 1. | Influence of etching parameters on sidewall roughness of silicon based waveguide etched by inductively coupled plasma
脊形波导侧壁粗糙度的影响 |
| 2. | The related mechanics are also discussed . the results present a new technique to prepare silicon based blue light material
这一研究结果为硅基蓝光材料的制备提供了一种新的技术。 |
| 3. | Abstract : new products development and the production technology of china silicon base multicomponent alloy are reviewed , the appropriate countermeasures are put forward in view of existing problems
文摘:回顾了我国硅系复合合金的品种开发及生产工艺，针对现存的主要问题，提出了相应的对策。 |
| 4. | Abstract : silicon and silicon based mems techniques are the main streams of mems techniques . the microstructure gas sensors manufactured by these techniques are introdued briefly in the paper
文摘:硅和硅基微机电系统技术是微机电系统技术的主流,本文主要介绍用这种技术制造的各种微结构气敏传感器。 |
| 5. | Highly concentrated silicon based emulsifier . it is effective with man aqueous foaming systems , producing particular long - term durability with alkaline systems . most effective without foam formation
本品由浓缩矽化合物乳化而成，可消除各种水质泡沫，不起化学作用，不会形成污物，是消除不便泡沫最有效的经济产品。 |
| 6. | Later , the discovery of all colures photoluminescence and electric - luminescence from porous silicon and the encouraging progress in fabricating porous silicon based light - emitters has cast a new light on si - based opt - electronics
多孔硅可能弥补单晶硅材料不能有效发光的缺点，预示了用单晶硅制备发光器件进而实现全硅光电子集成的美好前景。 |
| 7. | This thesis presents a study on the non - silicon based mems optical switch and variable optical attenuator . by fully utilizing the available micro - machining capability , we developed a series of devices based on electrical discharge machining technique
在阅读国内外相关文献的基础上，利用实验室现有条件，制作了一系列器件，并对器件进行了性能测试与分析。 |
| 8. | With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
用不同的方法制备的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在较低的电压万均观察到了室温可见电致发光现象，峰位都在510nm左右，其峰位不因薄膜样品内所含颗粒的种类、薄膜的制备方法、偏压及后处理的影响，表明电致发光主要来源于电子和空穴在510 、基质中的发光中心的辐射复合发光。 |
| 9. | Based on summarizing the actual research status , developing prospects , and the characteristic of different ways in preparation for silicon based composite , three ways were chosen , which was pyrolysis for si - phenolic resin prolyzed carbon material , using different catalyzer to prepare for si - o network coated silicon and carbon complex composite , easily chemical and deoxidizing reaction for super tiny metals mixed silicon and carbon complescomposite
通过高温热解法制备了硅-酚醛树脂( pf , phenolicresin )热解碳材料。在700的条件下制备了硅-酚醛树脂热解碳材料,发现si和热解碳的质量比为3 : 7时材料具有最优异的性能,首次脱嵌容量为394 . 7mah ? g ~ ( - 1 ) ,充放电效率为50 % 。 |
